Specifications
Model Number: MZ-QLB960NE
Brand: Samsung
Alt Part Number(s): MZ-QLB960NE
Product Type: Solid State Drive
Technical Description
Brand: Samsung
Model: MZ-QLB960NE
Series: 983 DCT
Capacity: 960 GB
Buffer Size: 1.5 GB
Interface: U.2 PCIe 3.0 x4 (NVMe)
NAND Flash Memory Type: 3D triple-level cell (TLC)
Internal Data Rate: 3000 MBps (read) / 1050 MBps (write)
Maximum 4KB Random Write: 40000 IOPS
Maximum 4KB Random Read: 400000 IOPS
Power Consumption: 8.6 Watt (read) ¦ 8.1 Watt (write) ¦ 4 Watt (idle max)
Min Operating Temperature: 32 °F
Max Operating Temperature: 158 °F
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Output Voltage: 208 - 230 V AC
Protocols: Web. SNMP. Telnet
Form Factor: 2.5'
Width: 2.7 in
Depth: 3.9 in
Height: 0.3 in
*Product descriptions. images. and part numbers are subject to change and may not accurately reflect manufacturer product alterations. For the latest and most precise information. kindly refer to the manufacturer's website and use the item's manufacturer part number.
